TA07B

Parameters - Diodes & Zener Diodes
Forward voltage VF
Reverse voltage VR
Zener voltage VZ
Reverse leakage current IR
Dynamic resistance DC Rdyn
Dynamic resistance AC Rz
Parameters - Bipolar Transistors
Breakdown voltage VCEO(BR)
Breakdown voltage VCES(BR)
Saturation voltage VCE(sat)
Saturagen voltage VBE(sat)
Breakdown voltage VCBO
Breakdown voltage VEBO
Diod forward voltage VF(diode)
Collector/Emitter cutoff voltage ICEO, ICBO, IEBO
On voltage VBE(on)
DC current gain hfe(DC)
AC current gain H21e(AC)
Parameters - MOS-FETs
Breakdown voltage V(BR)DSS
Inverse diode voltage VSD
Gate threshold voltage VGS
On resistance RDS(on)
Forward transconductance gfs
Forward/Reverse leakage current IGSS
On voltage VDS(on)
On-state drain current ID(on)
Parameters - Triacs & Thyristors
Gate trigger current IGT
Gate trigger voltage VGT
Off-state leakage current IDO
Hold current IH
Latch current IL
Transistors - Diodes, Thyristors - Triacs

Testing
   • Bipolar Transistors (NPN, PNP, Low power
     Darlington)
   • Field effect transistors (N-channel,
     P-channel, Power-MOS)
   • Diodes
   • Zener diodes
   • Arrays
   • 2000V optional

Screenshots

Control panel for diodes testing
Control panel for  diodes testing Values to be tested are entered to panel columns 		Control panel for triacs testing
Control panel for triacs testing
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