OmniEtch
SYSTEM SPECIFICATION -

gProvide sequential removal of die layers by controlled etching  of silicon, oxides, nitrides, low k dielectrics, aluminium, titanium, Ti/W, copper etc.
Elimination of chemical migration through vias - achieved by the  use of a proprietary  Etchant Carrier Medium (36-6)  
gEtchant Carrier Medium compatible with all known etch formulae
Silicon Etching down to Epi-layer with surface planarity to +/- 0.1 µm
gUsers choice of Etch Chemistries, Etch Time and Etch Temperature

 

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